Current Trends in Silicon Carbide

The July edition of physica status solidi b is a special issue that covers key aspects of our current understanding of the material and physical basis of silicon carbide (SiC). This compound is a rather new entry in the field of wide band gap semiconductor materials. The issue contains 17 invited Feature Articles, many of them written by members of the Research Unit “Silicon carbide as semiconductor material: novel aspects of crystal growth and doping” which was funded by the Deutsche Forschungsgemeinschaft (DFG) between 2002 and 2008. Also included is an Expert Opinion by Kimimori Hamada (Toyoto Motor Corporation) providing a vision of SiC-based electronics in the hybrid-driven automobile of the future. Guest-edited by Lothar Ley and Gerhard Pensl, University of Erlangen-Nürnberg, Germany, this volume gives a comprehensive overview of important topics ranging from crystal growth and doping to defects characterization and technological applications.

phys. status solidi b 2008, 245, Issue 7